AUIRFU8403-701TRL parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

AUIRFU8403-701TRL

Description:

MOSFET

Stock:

55073

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

100A(Tc)

Drain source voltage (Vdss)

40 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

99 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3171 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

3.1 mΩ @ 76A,10V

Power dissipation (maximum)

99W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.9V @ 100µA

packing

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO251-3-21

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Final sale

DataSheet

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AUIRFU8403-701TRL（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55073,Price reference "real-time change" China/Hongkong。 AUIRFU8403-701TRL package/specs, Download AUIRFU8403-701TRL、Datasheet。