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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Brand:
    Samsung Micron Hynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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    Memory format:
    DRAM
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    Installation type:
    Surface mount
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    packing:
    pipe CT TR,CT box TR pallet bulk
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    Memory type:
    Volatile
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    storage capacity :
    4 Gbit 512MB 256 Mbit 1 Gbit 2 Gbit 512 Mbit 2Gb 128Mb 1Gb 512Mb 256Mb 1GB 512Mb(128M x 4) 512Mb(64M x 8) 512Mb(32M x 16) 256Mb(64M x 4) 256Mb(32M x 8) 256Mb(16M x 16) 1Gb(64M x 16) 1Gb(128M x 8) 1Gb(256M x 4) 4Gb(1G x 4) 4Gb(512M x 8) 2Gb(512M x 4) 2Gb(256M x 8) 2Gb(128M x 16)
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    Voltage - Supply:
    1.7V ~ 1.9V 1.55V ~ 1.9V
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    working temperature :
    0°C ~ 95°C(TC) 0°C ~ 70°C(TA) 0°C ~ 85°C(TC) -40°C ~ 125°C(TC) -40°C ~ 105°C(TC) -40°C ~ 105°C(TA) -40°C ~ 95°C(TC) -40°C ~ 85°C(TA) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
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    Clock frequency:
    266 MHz 533 MHz 400 MHz 333 MHz 267 MHz 200 MHz
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    Access time:
    600 ps 400 ns 450 ns 500 ps 450 ps 400 ps 350 ps -
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    choosed:
  • 1.7V ~ 1.9V
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  • Volatile
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  • 512Mb(64M x 8)
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  • 267 MHz
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  • box
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  • nanya
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