DRAM512Mb(64M x 8)333 MHz450 ps1.7V ~ 1.9V-DDR2Parameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Hynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel

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Memory format:

DRAM

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Installation type:

Surface mount

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packing:

pipe CT TR,CT box TR pallet bulk

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Memory type:

Volatile

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storage capacity :

4 Gbit 512MB 256 Mbit 1 Gbit 2 Gbit 512 Mbit 2Gb 128Mb 1Gb 512Mb 256Mb 1GB 512Mb(128M x 4) 512Mb(64M x 8) 512Mb(32M x 16) 256Mb(64M x 4) 256Mb(32M x 8) 256Mb(16M x 16) 1Gb(64M x 16) 1Gb(128M x 8) 1Gb(256M x 4) 4Gb(1G x 4) 4Gb(512M x 8) 2Gb(512M x 4) 2Gb(256M x 8) 2Gb(128M x 16)

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Voltage - Supply:

1.7V ~ 1.9V 1.55V ~ 1.9V

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working temperature :

0°C ~ 95°C(TC) 0°C ~ 70°C(TA) 0°C ~ 85°C(TC) -40°C ~ 125°C(TC) -40°C ~ 105°C(TC) -40°C ~ 105°C(TA) -40°C ~ 95°C(TC) -40°C ~ 85°C(TA) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)

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Clock frequency:

266 MHz 533 MHz 400 MHz 333 MHz 267 MHz 200 MHz

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Access time:

600 ps 400 ns 450 ns 500 ps 450 ps 400 ps 350 ps -

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choosed:

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Total：24

Photo

Mfr.Part #

Brand

Description

DataSheet

Pricing(USD)

Qty

IS43DR86400D-3DBI-TR

IS43DR86400D-3DBI-TR

IC DRAM 512MBIT PARALLEL 60TWBGA

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IS43DR86400D-3DBI

IS43DR86400D-3DBI

IC DRAM 512MBIT PARALLEL 60TWBGA

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IS43DR86400C-3DBI-TR

IS43DR86400C-3DBI-TR

IC DRAM 512MBIT PARALLEL 60TWBGA

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Offer

IS43DR86400C-3DBI

IS43DR86400C-3DBI

IC DRAM 512MBIT PARALLEL 60TWBGA

Call

Offer

IS43DR86400C-3DBLI-TR

IS43DR86400C-3DBLI-TR

IC DRAM 512MBIT PARALLEL 60TWBGA

1+：$2

Offer

IS43DR86400D-3DBLI-TR

IS43DR86400D-3DBLI-TR

IC DRAM 512MBIT PARALLEL 60TWBGA

1+：$1.18

Offer

IS43DR86400D-3DBLI

IS43DR86400D-3DBLI

IC DRAM 512MBIT PARALLEL 60TWBGA

1+：$1.16

Offer

IS43DR86400C-3DBL

IS43DR86400C-3DBL

IC DRAM 512MBIT PARALLEL 60TWBGA

1+：$1.74

Offer

IS43DR86400C-3DBL-TR

IS43DR86400C-3DBL-TR

IC DRAM 512MBIT PARALLEL 60TWBGA

1+：$0.72

Offer

MT47H64M8B6-3:D TR

MT47H64M8B6-3:D TR

IC DRAM 512MBIT PARALLEL 60FBGA

Call

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MT47H64M8B6-3 IT:D TR

MT47H64M8B6-3 IT:D TR

IC DRAM 512MBIT PARALLEL 60FBGA

Call

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MT47H64M8CB-3:B TR

MT47H64M8CB-3:B TR

IC DRAM 512MBIT PARALLEL 60FBGA

Call

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MT47H64M8CB-3:B

MT47H64M8CB-3:B

IC DRAM 512MBIT PARALLEL 60FBGA

Call

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MT47H64M8CB-37E IT:B TR

MT47H64M8CB-37E IT:B TR

IC DRAM 512MBIT PARALLEL 60FBGA

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MT47H64M8CB-37E IT:B

MT47H64M8CB-37E IT:B

IC DRAM 512MBIT PARALLEL 60FBGA

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MT47H64M8CB-25:B TR

MT47H64M8CB-25:B TR

IC DRAM 512MBIT PARALLEL 60FBGA

Call

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MT47H64M8CB-25:B

MT47H64M8CB-25:B

IC DRAM 512MBIT PARALLEL 60FBGA

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MT47H32M16CC-3E:B TR

MT47H32M16CC-3E:B TR

IC DRAM 512MBIT PARALLEL 84FBGA

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MT47H32M16CC-3E:B

MT47H32M16CC-3E:B

IC DRAM 512MBIT PARALLEL 84FBGA

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MT47H128M8BT-3 L:A

MT47H128M8BT-3 L:A

IC DRAM 1GBIT PARALLEL 92FBGA

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