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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Brand:
    Samsung Micron Hynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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    Memory format:
    DRAM
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    Installation type:
    Surface mount
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    packing:
    pipe CT TR,CT box TR pallet bulk
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    Memory type:
    Volatile
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    storage capacity :
    4 Gbit 512MB 256 Mbit 1 Gbit 2 Gbit 512 Mbit 2Gb 128Mb 1Gb 512Mb 256Mb 1GB 512Mb(128M x 4) 512Mb(64M x 8) 512Mb(32M x 16) 256Mb(64M x 4) 256Mb(32M x 8) 256Mb(16M x 16) 1Gb(64M x 16) 1Gb(128M x 8) 1Gb(256M x 4) 4Gb(1G x 4) 4Gb(512M x 8) 2Gb(512M x 4) 2Gb(256M x 8) 2Gb(128M x 16)
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    Voltage - Supply:
    1.7V ~ 1.9V 1.55V ~ 1.9V
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    working temperature :
    0°C ~ 95°C(TC) 0°C ~ 70°C(TA) 0°C ~ 85°C(TC) -40°C ~ 125°C(TC) -40°C ~ 105°C(TC) -40°C ~ 105°C(TA) -40°C ~ 95°C(TC) -40°C ~ 85°C(TA) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
    more
    Clock frequency:
    266 MHz 533 MHz 400 MHz 333 MHz 267 MHz 200 MHz
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    Access time:
    600 ps 400 ns 450 ns 500 ps 450 ps 400 ps 350 ps -
    more
    choosed:
  • -40°C ~ 95°C(TC)
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  • TR
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  • Surface mount
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  • 1Gb
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  • Winbond
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    • Total：6
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    W971GG8SB25I TR
    W971GG8SB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 60WBGA
    Datasheet
    Call
    Offer
    W971GG8KB25I TR
    W971GG8KB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 60WBGA
    Datasheet
    Call
    Offer
    W971GG6SB25I TR
    W971GG6SB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 84WBGA
    Datasheet
    Call
    Offer
    W971GG6KB25I TR
    W971GG6KB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 84WBGA
    Datasheet
    Call
    Offer
    W971GG6NB25I TR
    W971GG6NB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 84WBGA
    Datasheet

    1+：$0.71

    Offer
    W971GG8NB25I TR
    W971GG8NB25I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 60WBGA
    Datasheet

    1+：$0.73

    Offer
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