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K4A4G165WF-BCTD
SSDPEKNU512GZ
MT40A512M16LY-075:E
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Brand:
Samsung
Micron
Hynix
Winbond
nanya
ELPIDA
Etron
ISSI
ProMOS
Alliance Memory
Zentel
more
Memory format:
DRAM
more
Installation type:
Surface mount
more
packing:
pipe
CT
TR,CT
box
TR
pallet
bulk
more
Memory type:
Volatile
more
storage capacity :
4 Gbit
512MB
256 Mbit
1 Gbit
2 Gbit
512 Mbit
2Gb
128Mb
1Gb
512Mb
256Mb
1GB
512Mb(128M x 4)
512Mb(64M x 8)
512Mb(32M x 16)
256Mb(64M x 4)
256Mb(32M x 8)
256Mb(16M x 16)
1Gb(64M x 16)
1Gb(128M x 8)
1Gb(256M x 4)
4Gb(1G x 4)
4Gb(512M x 8)
2Gb(512M x 4)
2Gb(256M x 8)
2Gb(128M x 16)
more
Voltage - Supply:
1.7V ~ 1.9V
1.55V ~ 1.9V
more
working temperature :
0°C ~ 95°C(TC)
0°C ~ 70°C(TA)
0°C ~ 85°C(TC)
-40°C ~ 125°C(TC)
-40°C ~ 105°C(TC)
-40°C ~ 105°C(TA)
-40°C ~ 95°C(TC)
-40°C ~ 85°C(TA)
-40°C ~ 85°C(TC)
-25°C ~ 85°C(TC)
more
Clock frequency:
266 MHz
533 MHz
400 MHz
333 MHz
267 MHz
200 MHz
more
Access time:
600 ps
400 ns
450 ns
500 ps
450 ps
400 ps
350 ps
-
more
choosed:
600 ps
0°C ~ 85°C(TC)
DRAM
256Mb(16M x 16)
box
Total:
7
Photo
Mfr.Part #
Brand
Description
DataSheet
Pricing(USD)
Qty
MT47H32M16CC-5E L:B TR
Micron
IC DRAM 512MBIT PARALLEL 84FBGA
Datasheet
Call
Offer
MT47H32M16CC-5E L:B
Micron
IC DRAM 512MBIT PARALLEL 84FBGA
Datasheet
Call
Offer
MT47H16M16BG-37V:B
Micron
IC DRAM 256MBIT PARALLEL 84FBGA
Datasheet
Call
Offer
MT47H128M8BT-5E L:A
Micron
IC DRAM 1GBIT PARALLEL 92FBGA
Datasheet
Call
Offer
MT47H16M16BG-3:B TR
Micron
IC DRAM 256MBIT PARALLEL 84FBGA
Datasheet
1+:$1.24
Offer
MT47H16M16BG-37E:B TR
Micron
IC SDRAM 256MBIT 266MHZ 84FBGA
Datasheet
Call
Offer
MT47H256M4HQ-5E:E TR
Micron
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
1+:$5.05
Offer
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