On saleTRDRAM4Gb(256M x 16)0°C ~ 95°C(TC)1.283V ~ 1.45V-DDR3Parameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Hynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel

Memory format:

DRAM -

Installation type:

- Surface mount

packing:

TR,-,- pallet CT bulk TR box TR,CT pipe

Part status:

On sale Final sale stop production Not applicable to new design

Memory type:

Volatile

storage capacity :

512Mb 4 Gb 1 Gb 1Gb 2Gb 4Gb 16Gb 2 Gb 16 Gbit 512 Mbit 2 Gbit 1 Gbit 4 Gbit 8 Gbit 512Mb(32M x 16) 1Gb(64M x 16) 1Gb(128M x 8) 1Gb(256M x 4) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4) 8Gb(512M x 16) 8Gb(2G x 4) 16Gb(1G x 16) 4Gb(256M x 16) 8Gb(1G x 8) 2GB 4GB 8GB

Voltage - Supply:

1.283V ~ 1.45V,1.425V ~ 1.575V 1.35 V 1.35V 1.5V 1.2V - 1.283V ~ 1.45V 1.425V ~ 1.575V

working temperature :

0 ~ 85 °C -40 ~ 95 °C -40°C ~ 115°C(TC) -40 ~ 105 °C -40°C ~ 95°C(TC) -40°C ~ 105°C(TC) 0°C ~ 95°C(TA) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC) 0°C ~ 95°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC)

Encapsulation/Housing:

FBGA 96-VFBGA 78-VFBGA 96-LFBGA 96TBGA 9FBGA 78FBGA 96FBGA BGA-96 FPGA-96 FPGA-78 WFBGA-200 SMD PBGA96 BGA96 FBGA96 FBGA78 BGA-78 TFBGA-78 BGA 96-TWBGA(10x14) 96-TWBGA(9x13) FBGA-96 FBGA-78 FBGA82 96-TFBGA 96-FBGA 78-TFBGA 82-FBGA

choosed:

4Gb(256M x 16)