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K4A4G165WF-BCTD
SSDPEKNU512GZ
MT40A512M16LY-075:E
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DDR4
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Brand:
Samsung
Micron
Hynix
Etron
ISSI
Alliance Memory
more
Memory format:
-
DRAM
more
Installation type:
Surface mount
more
packing:
TR,CT
TR
pallet
bulk
more
series:
TwinDie™
Automotive, AEC-Q100
more
Part status:
stop production
On sale
more
Memory type:
nonvolatile
Volatile
DDR4 SDRAM
more
storage capacity :
16 Gbit
16Gb
64Gb(16G x 4)
32Gb(2G x 16)
32Gb(8G x 4)
16Gb(4G x 4)
16Gb(2G x 8)
8Gb
4 Gb
8 Gbit
4 Gbit
24 Gb
12 Gb
32 Gb
16 Gb
8 Gb
16Gb(1G x 16)
4Gb(1G x 4)
4Gb(512M x 8)
1Gb(128M x 8)(NAND),512M(32M x 16)(LPDDR2)
2Gb(256M x 8)(NAND),2G(64M x 32)(LPDDR2)
4Gb(256M x 16)
8Gb(2G x 4)
8Gb(512M x 16)
8Gb(1G x 8)
32Gb(4G x 8)
4GB
8GB
16GB
32GB
more
Voltage - Supply:
1.2V
1.1V
1.8 / 1.1 / 0.6 V
1.14V ~ 1.26V
more
Clock frequency:
1.6 GHz
1.33 GHz
1.2 GHz
1.05 GHz
1.333 GHz
1.066 GHz
933 MHz
more
Encapsulation/Housing:
96FBGA
78FBGA
96TBGA
FBGA
FBGA-78
FBGA-96
96-BGA
BGA
200FBGA
96-TFBGA
78-TFBGA
mould
149-WFBGA
100-LBGA
8-UDFN
52-VLGA
more
choosed:
Automotive, AEC-Q100
96-TFBGA
4Gb(256M x 16)
TR,CT
Total:
6
Photo
Mfr.Part #
Brand
Description
DataSheet
Pricing(USD)
Qty
MT40A256M16GE-083E AUT:B TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
1+:$2.36
Offer
MT40A256M16GE-083E AAT:B TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
Call
Offer
MT40A256M16GE-075E AUT:B TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
Call
Offer
MT40A256M16GE-075E AIT:B TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
Call
Offer
MT40A256M16GE-075E AAT:B TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
1+:$0.82
Offer
MT40A256M16LY-062E AAT:F TR
Micron
IC DRAM 4GBIT PARALLEL 96FBGA
Datasheet
1+:$4.09
Offer
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