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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Brand:
    Samsung Micron Hynix Etron ISSI Alliance Memory
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    Memory format:
    - DRAM
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    Installation type:
    Surface mount
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    packing:
    TR,CT TR pallet bulk
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    series:
    TwinDie™ Automotive, AEC-Q100
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    Part status:
    stop production On sale
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    Memory type:
    nonvolatile Volatile DDR4 SDRAM
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    storage capacity :
    16 Gbit 16Gb 64Gb(16G x 4) 32Gb(2G x 16) 32Gb(8G x 4) 16Gb(4G x 4) 16Gb(2G x 8) 8Gb 4 Gb 8 Gbit 4 Gbit 24 Gb 12 Gb 32 Gb 16 Gb 8 Gb 16Gb(1G x 16) 4Gb(1G x 4) 4Gb(512M x 8) 1Gb(128M x 8)(NAND),512M(32M x 16)(LPDDR2) 2Gb(256M x 8)(NAND),2G(64M x 32)(LPDDR2) 4Gb(256M x 16) 8Gb(2G x 4) 8Gb(512M x 16) 8Gb(1G x 8) 32Gb(4G x 8) 4GB 8GB 16GB 32GB
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    Voltage - Supply:
    1.2V 1.1V 1.8 / 1.1 / 0.6 V 1.14V ~ 1.26V
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    Clock frequency:
    1.6 GHz 1.33 GHz 1.2 GHz 1.05 GHz 1.333 GHz 1.066 GHz 933 MHz
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    Encapsulation/Housing:
    96FBGA 78FBGA 96TBGA FBGA FBGA-78 FBGA-96 96-BGA BGA 200FBGA 96-TFBGA 78-TFBGA mould 149-WFBGA 100-LBGA 8-UDFN 52-VLGA
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    choosed:
  • 1.2 GHz
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  • TR
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  • DRAM
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  • Surface mount
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  • 4Gb(256M x 16)
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    • Total：4
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    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    IS43QR16256A-083RBL-TR
    IS43QR16256A-083RBL-TR
    ISSI
    IC DRAM 4GBIT PARALLEL 96TWBGA
    Datasheet
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    IS43QR16256A-083RBLI-TR
    IS43QR16256A-083RBLI-TR
    ISSI
    IC DRAM 4GBIT PARALLEL 96TWBGA
    Datasheet
    Call
    Offer
    MT40A256M16GE-083E AIT:B TR
    MT40A256M16GE-083E AIT:B TR
    Micron
    IC DRAM 4GBIT PARALLEL 96FBGA
    Datasheet
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    Offer
    EDY4016AABG-DR-F-R TR
    EDY4016AABG-DR-F-R TR
    Micron
    IC DRAM 4GBIT PARALLEL 96FBGA
    Datasheet
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