TRFLASH - NANDFlash Memory2.7V ~ 3.6V128Gb(16G x 8)-EMMCParameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Hynix Toshiba Kingston ISSI KIOXIA SanDis

Memory format:

Flash Memory -

Installation type:

Surface mount

packing:

bulk pallet TR box TR,CT pipe bag Tray Reel Reel, Cut Tape Reel, Cut Tape, MouseReel

Memory type:

FLASH - NAND nonvolatile

storage capacity :

128GB 256GB 32Gb(4G x 8) 64Gb(8G x 8) 256Gb(32G x 8) 512Gb(64G x 8) 1Tb(128G x 8) 2Tb(256G x 8) 512Kb(64K x 8) 16Gb(2G x 8) 128Gb(16G x 8) 4 Gb 8 Gb 16 Gb 32 Gb 12 Gb 24 Gb 48 Gb 64 Gb 16 GB 32 GB 64 GB 128 GB 8 GB 4 GB 256 GB 512 GB 1 TB 128G 256G 32G 16G 4GB 8GB 16GB 32GB 64GB

Voltage - Supply:

1.7V ~ 1.9V 2.7V ~ 3.6V 1.65V ~ 3.6V 1.8 / 1.1 / 0.6 V 16K / 32 ms 1.8 / 1.2 / 1.2 V 1.8 / 1.1 / 1.1 V 2.7 V~3.6 V ~

working temperature :

-40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -25°C ~ 85°C(TA) -25°C ~ 85°C(TC) -40 ~ 95 °C -40 ~ 105 °C -40 ~ 125 °C -25 ~ 85 °C 170FBGA 180FBGA - 25 C~+ 85 C - 40 C~+ 105 C ~ - 40 C~+ 150 C - 40 C~+ 85 C

Clock frequency:

200 MHz 52 MHz

Encapsulation/Housing:

100-LBGA 100-TBGA 168-VFBGA 153-LFBGA 169-LFBGA 153-TFBGA 153-VFBGA 153-WFBGA 169-TFBGA 169-VFBGA 169-WFBGA 153FBGA FBGA 200FBGA Mass Production Sample 178FBGA 253FBGA FBGA-153 FBGA-1-- LBGA-1-- 11.5 mm x 13 mm x -.8 mm TFBGA-153 11.5 mm x 13 mm x 1.2 mm BGA QFN BGA169

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