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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Brand:
    Samsung Micron nanya ELPIDA ISSI
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    Memory format:
    - DRAM
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    Installation type:
    Surface mount -
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    packing:
    TR,CT TR pallet pipe bulk
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    storage capacity :
    256Mb(8M x 32) 128Mb(4M x 32) 32Mb(1M x 32) 8Gb(256M x 32) 4Gb(128M x 32) 1Gb(32M x 32) 2Gb(64M x 32) 512Mb(16M x 32) 64Mb(2M x 32) 128Mb(8M x 16) 64Mb(4M x 16) 32Mb(2M x 16) 2Gb(128M x 16) 1Gb(64M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 4Gb(256M x 16)
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    Voltage - Supply:
    1.06V ~ 1.17V,1.7V ~ 1.95V 1.14V ~ 1.95V 1.7V ~ 1.9V - 1.7V ~ 1.95V 1.14V ~ 1.3V,1.7V ~ 1.95V
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    working temperature :
    -40°C ~ 85°C(TC) -40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) 0°C ~ 70°C(TA) -25°C ~ 85°C(TA) 0°C ~ 85°C(TC) -40°C ~ 105°C(TC)
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    Clock frequency:
    208 MHz 104 MHz 1.6 GHz 133 MHz 533 MHz 400 MHz 333 MHz 200 MHz 167 MHz 166 MHz
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    Encapsulation/Housing:
    FBGA60 60-VFBGA 90-VFBGA 200-WFBGA QFN 200-TFBGA 90-LFBGA BGA 90-TFBGA FBGA 168-TFBGA 152-VFBGA 240-WFBGA 168-WFBGA 134-TFBGA 168-VFBGA 60-TFBGA
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    choosed:
  • TR,CT
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  • DRAM
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  • 256Mb(16M x 16)
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  • 1.7V ~ 1.95V
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  • -40°C ~ 85°C(TA)
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  • 166 MHz
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    • Total：2
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    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    MT46H16M16LFBF-6 IT:H TR
    MT46H16M16LFBF-6 IT:H TR
    Micron
    IC DRAM 256MBIT PARALLEL 60VFBGA
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    MT46H16M16LFBF-6 IT:A TR
    MT46H16M16LFBF-6 IT:A TR
    Micron
    IC DRAM 256MBIT PARALLEL 60VFBGA
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