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K4A4G165WF-BCTD
SSDPEKNU512GZ
MT40A512M16LY-075:E
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LPDDR1
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Brand:
Samsung
Micron
nanya
ELPIDA
ISSI
more
Memory format:
-
DRAM
more
Installation type:
Surface mount
-
more
packing:
TR,CT
TR
pallet
pipe
bulk
more
storage capacity :
256Mb(8M x 32)
128Mb(4M x 32)
32Mb(1M x 32)
8Gb(256M x 32)
4Gb(128M x 32)
1Gb(32M x 32)
2Gb(64M x 32)
512Mb(16M x 32)
64Mb(2M x 32)
128Mb(8M x 16)
64Mb(4M x 16)
32Mb(2M x 16)
2Gb(128M x 16)
1Gb(64M x 16)
512Mb(32M x 16)
256Mb(16M x 16)
4Gb(256M x 16)
more
Voltage - Supply:
1.06V ~ 1.17V,1.7V ~ 1.95V
1.14V ~ 1.95V
1.7V ~ 1.9V
-
1.7V ~ 1.95V
1.14V ~ 1.3V,1.7V ~ 1.95V
more
working temperature :
-40°C ~ 85°C(TC)
-40°C ~ 85°C(TA)
-40°C ~ 95°C(TC)
-40°C ~ 105°C(TA)
0°C ~ 70°C(TA)
-25°C ~ 85°C(TA)
0°C ~ 85°C(TC)
-40°C ~ 105°C(TC)
more
clock frequency:
208 MHz
104 MHz
1.6 GHz
133 MHz
533 MHz
400 MHz
333 MHz
200 MHz
167 MHz
166 MHz
more
Encapsulation/Housing:
FBGA60
60-VFBGA
90-VFBGA
200-WFBGA
QFN
200-TFBGA
90-LFBGA
BGA
90-TFBGA
FBGA
168-TFBGA
152-VFBGA
240-WFBGA
168-WFBGA
134-TFBGA
168-VFBGA
60-TFBGA
more
choosed:
-25°C ~ 85°C(TA)
168-WFBGA
166 MHz
TR
4Gb(128M x 32)
Micron
Total:
1
Photo
Mfr.Part #
Brand
Description
DataSheet
Pricing(USD)
Qty
MT46H128M32L2KQ-6 WT:B TR
Micron
IC DRAM 4GBIT PARALLEL 168WFBGA
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