TR,CT-40°C ~ 105°C(TA)133 MHz-LPDDR2Parameter Specification Quotation DataSheet-ICQQG

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Brand:

Samsung Micron Hynix nanya ELPIDA ISSI

Memory format:

DRAM

Installation type:

Surface mount

packing:

pallet TR box TR,CT CT bulk,pallet bulk

Memory type:

Volatile

storage capacity :

8Gb(128M x 64) 128Mb(4M x 32) 256Mb(8M x 32) 1Gb(32M x 32) 2Gb(64M x 32) 4Gb(64M x 64) 512Mb(16M x 32) 4G 16G 8G 12G 1Gb(64M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 4Gb(256M x 16) 4Gb(128M x 32) 6Gb(192M x 32) 8Gb(256M x 32) 12Gb(384M x 32) 16Gb(256M x 64) 16Gb(512M x 32) 64Mb(4M x 16) 128Mb(8M x 16)

working temperature :

0°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC) -30°C ~ 85°C(TC) -25°C ~ 85°C(TA) 0°C ~ 70°C(TA)

Clock frequency:

104 MHz 125 MHz 333 MHz 400 MHz 533 MHz 100 MHz 133 MHz 166 MHz

Encapsulation/Housing:

BGA-168 134-VFBGA 134-WFBGA 168-WFBGA 216-UFBGA 216-VFBGA 216-WFBGA 220-VFBGA 220-WFBGA 134-TFBGA 240-VFBGA 240-WFBGA QFP TSOP66 TSSOP66 TSSOP-66 BGA-216 BGA60 TSSOP54 BGA-240 TSSOP TSOP 253-TFBGA FBGA BGA 54-VFBGA 90-VFBGA 54-TSOP(0.400,10.16mm wide) 121-WFBGA 168-VFBGA

choosed:

TR,CT

133 MHz

-40°C ~ 105°C(TA)

Total：1

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Mfr.Part #

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Description

DataSheet

Pricing(USD)

Qty

MT48H16M16LFBF-75 AT:G TR

Micron

IC DRAM 256MBIT PARALLEL 54VFBGA

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