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    • Hot：
    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Brand:
    Samsung Micron Hynix nanya ELPIDA ISSI
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    Memory format:
    DRAM
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    Installation type:
    Surface mount
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    packing:
    pallet TR box TR,CT CT bulk,pallet bulk
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    Memory type:
    Volatile
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    storage capacity :
    8Gb(128M x 64) 128Mb(4M x 32) 256Mb(8M x 32) 1Gb(32M x 32) 2Gb(64M x 32) 4Gb(64M x 64) 512Mb(16M x 32) 4G 16G 8G 12G 1Gb(64M x 16) 512Mb(32M x 16) 256Mb(16M x 16) 4Gb(256M x 16) 4Gb(128M x 32) 6Gb(192M x 32) 8Gb(256M x 32) 12Gb(384M x 32) 16Gb(256M x 64) 16Gb(512M x 32) 64Mb(4M x 16) 128Mb(8M x 16)
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    working temperature :
    0°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC) -30°C ~ 85°C(TC) -25°C ~ 85°C(TA) 0°C ~ 70°C(TA)
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    clock frequency:
    104 MHz 125 MHz 333 MHz 400 MHz 533 MHz 100 MHz 133 MHz 166 MHz
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    Encapsulation/Housing:
    BGA-168 134-VFBGA 134-WFBGA 168-WFBGA 216-UFBGA 216-VFBGA 216-WFBGA 220-VFBGA 220-WFBGA 134-TFBGA 240-VFBGA 240-WFBGA QFP TSOP66 TSSOP66 TSSOP-66 BGA-216 BGA60 TSSOP54 BGA-240 TSSOP TSOP 253-TFBGA FBGA BGA 54-VFBGA 90-VFBGA 54-TSOP(0.400,10.16mm wide) 121-WFBGA 168-VFBGA
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    choosed:
  • 168-WFBGA
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  • -30°C ~ 85°C(TC)
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  • 4Gb(128M x 32)
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    • Total：4
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    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    EDB4432BBPA-1D-F-R TR
    EDB4432BBPA-1D-F-R TR
    Micron
    IC DRAM 4GBIT PARALLEL 168FBGA
    Datasheet
    Call
    Offer
    EDB4432BBPA-1D-F-D
    EDB4432BBPA-1D-F-D
    Micron
    IC DRAM 4GBIT PARALLEL 168FBGA
    Datasheet

    1+：$19.04

    Offer
    MT42L128M32D1LF-25 WT:A
    MT42L128M32D1LF-25 WT:A
    Micron
    IC DRAM 4GBIT PARALLEL 168FBGA
    Datasheet

    1+：$2.06

    Offer
    MT42L128M32D1LF-25 WT:A TR
    MT42L128M32D1LF-25 WT:A TR
    Micron
    IC DRAM 4GBIT PARALLEL 168FBGA
    Datasheet
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