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K4A4G165WF-BCTD
SSDPEKNU512GZ
MT40A512M16LY-075:E
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LPDDR3
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Brand:
Samsung
Micron
Hynix
nanya
ELPIDA
more
Memory format:
DRAM
more
Installation type:
-
Surface mount
more
packing:
bulk
pallet
TR
box
TR,CT
pipe
more
Part status:
On sale
stop production
more
Memory type:
Volatile
more
storage capacity :
256Mb(32M x 8)
512Mb(64M x 8)
1Gb(128M x 8)
64Gb(8G x 8)
256Gb(32G x 8)
2Tb(256G x 8)
32Mb(2M x 16)
64Mb(4M x 16)
8Gb(512M x 16)
32Gb(8G x 4)
4Gb(128M x 32)
8Gb(256M x 32)
12Gb(384M x 32)
16Gb(256M x 64)
16Gb(512M x 32)
24Gb(384M x 64)
24Gb(768M x 32)
32Gb(1G x 32)
32Gb(512M x 64)
64Gb(1G x 64)
16Mb(1M x 16)
128Gb(16G x 8)
288Mb(8M x 36)
288Mb(16M x 18)
288Mb(32M x 9)
1Gb(128M x 8)(NAND),256Mb(8M x 32)(LPDRAM)
1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)
4Gb(256M x 16)(NAND),4Gb(128M x 32)(LPDRAM)
4Gb(512M x 8)(NAND),2G(64M x 32)(LPDRAM)
1.125Gb(32Mb x 36)
1.125Gb(64Mb x 18)
576Mb(16M x 36)
8Gb(128M x 64)
4G
16 Gb
32 Gb
48 Gb
64 Gb
80 Gb
96 Gb
32G
16G
8G
12G
24G
64G
48G
24Gb(192M x 128)
more
Voltage - Supply:
-
1.7V ~ 1.9V
1.7V ~ 1.95V
2.5V ~ 3.6V
2.7V ~ 3.6V
1.14V ~ 1.95V
1.2V
1.21V ~ 1.29V
1.28V ~ 1.42V
1.31V ~ 1.391V
1.31V ~ 1.39V
1.3V ~ 1.545V
1.8 / 1.1 / 0.6 V
1.8 / 1.2 / 1.2 V
1.8 / 1.05 / 0.9 / 0.5
more
working temperature :
-40°C ~ 105°C
-40°C ~ 85°C(TA)
-40°C ~ 95°C(TC)
0°C ~ 95°C(TC)
-30°C ~ 105°C(TC)
-30°C ~ 85°C(TC)
-40°C ~ 85°C(TC)
-30°C ~ 85°C(TA)
-25 ~ 85 °C
-25 ~ 85'c
more
Clock frequency:
200 MHz
400 MHz
533 MHz
166 MHz
800 MHz
933 MHz
1.066 GHz
208 MHz
300 MHz
1067 MHz
1.25 GHz
1.5 GHz
1.625 GHz
7 GHz
8 GHz
more
choosed:
400 MHz
On sale
TR,CT
Total:
2
Photo
Mfr.Part #
Brand
Description
DataSheet
Pricing(USD)
Qty
MT49H8M36SJ-25:B TR
Micron
IC DRAM 288MBIT PARALLEL 144FBGA
Datasheet
Call
Offer
MT49H16M18SJ-25:B TR
Micron
IC DRAM 288MBIT PARALLEL 144FBGA
Datasheet
Call
Offer
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