Installation type | Surface mount |
packing | TR,CT |
series | HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 16-WFBGA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 3W |
FET Type | 2 P Channel(two) |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 7.9A |
On resistance (maximum) for different Ids and Vgs | 36 mΩ @ 7.9A,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | - |
Input capacitance at different Vds (Ciss) (maximum) | - |
FET function | standard |