ECH8619-TL-E
Home
Category
FET, MOSFET
ECH8619-TL-E
The pictures are for reference only
like

ECH8619-TL-E

Brand:ON
Model:ECH8619-TL-E
stock:10384
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-SMD,feedthrough
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 1.5W
FET Type N and P Channel
Drain source voltage (Vdss) 60V
Current at 25 ° C - continuous drain (Id) 3A,2A
On resistance (maximum) for different Ids and Vgs 93 mΩ @ 1.5A,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 12.8nC @ 10V
Input capacitance at different Vds (Ciss) (maximum) 560pF @ 20V
FET function Logic level gate
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer