MT41K64M16JT-125:G TR IC DRAM 1GBIT PARALLEL 96FBGA
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likeMT41K64M16JT-125:G TR IC DRAM 1GBIT PARALLEL 96FBGA
Brand：Micron
Model：MT41K64M16JT-125:G TR
stock：17582
Store：ShenZhen/Hongkong
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DataSheet
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product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 1Gb(64M x 16) |
| Voltage - Supply | 1.283V ~ 1.45V |
| working temperature | 0°C ~ 95°C(TC) |
| Memory interface | Paralleling |
| Clock frequency | 800 MHz |
| Access time | - |
| Access time | 13.75 ns |
| Encapsulation/Housing | 96-TFBGA |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | DDR3L |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
Real hammer! The iPhone 14 National Bank version uses domestic flash memory, why doesn't Apple admit it?
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Advantages of Micron memory chips (why micron chips are recommended)
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SK Hynix: It has secured the supply of equipment to its Chinese plant without obtaining a license within one year
SK Hynix successfully developed 238 layers of NAND flash memory
The stock price of the US chip giant plummeted, and Apple lost 610.6 billion
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