VP2206N2
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likeVP2206N2
Brand：Microchip
Model：VP2206N2
stock：42490
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥23.54
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| Installation type | Through-Hole |
| packing | bag |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-39 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 750mA(Tj) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
| On resistance (maximum) for different Ids and Vgs | 900 mΩ @ 3.5A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 10mA |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 450 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 360mW(Tc) |
Common problem
Industry trends
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