TP2104K1-G
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TP2104K1-G
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TP2104K1-G

Brand:Microchip
Model:TP2104K1-G
stock:29544
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.09
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C
Encapsulation/Housing TO-236AB(SOT23)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 160mA(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 6 Ω @ 500mA,10V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 60 pF @ 25 V
FET function -
Power dissipation (maximum) 360mW(Ta)
Common problem
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