Installation type | Through-Hole |
packing | bag |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | TO-92-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 500 V |
Current at 25 ° C - continuous drain (Id) | 54mA(Tj) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
On resistance (maximum) for different Ids and Vgs | 125 Ω @ 10mA,10V |
Vgs (th) (maximum) for different Ids | 4.5V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | - |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 70 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 1W(Tc) |