NVATS68301PZT4G
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NVATS68301PZT4G
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NVATS68301PZT4G

Brand:ON
Model:NVATS68301PZT4G
stock:79922
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 31A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 75 mΩ @ 14A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 55 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2850 pF @ 20 V
FET function -
Power dissipation (maximum) 84W(Tc)
Common problem
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