LND150N3-G-P013
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LND150N3-G-P013
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LND150N3-G-P013

Brand:Microchip
Model:LND150N3-G-P013
stock:91847
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.69
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Through-Hole
packing TB
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-92-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 30mA(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 0V
On resistance (maximum) for different Ids and Vgs 1000 Ω @ 500µA,0V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 10 pF @ 25 V
FET function depletion mode
Power dissipation (maximum) 740mW(Ta)
Common problem
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