TK25E06K3,S1X(S
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likeTK25E06K3,S1X(S
Brand：Toshiba
Model：TK25E06K3,S1X(S
stock：18386
Store：ShenZhen/Hongkong
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| Installation type | Through-Hole |
| packing | pipe |
| series | U-MOSIV |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | TO-220-3 |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 25A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | 18 mΩ @ 12.5A,10V |
| Vgs (th) (maximum) for different Ids | - |
| Gate charge (Qg) at different Vgs (maximum) | 29 nC @ 10 V |
| Vgs (max) | - |
| Input capacitance at different Vds (Ciss) (maximum) | - |
| FET function | - |
| Power dissipation (maximum) | 60W(Tc) |
Common problem
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