MSCSM120SKM31CTBL1NG
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likeMSCSM120SKM31CTBL1NG
Brand：Microchip
Model：MSCSM120SKM31CTBL1NG
stock：18774
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥166.54
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| Installation type | Base installation |
| packing | bulk |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | - |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiC(Silicon carbide bonded crystal tube) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 79A |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
| On resistance (maximum) for different Ids and Vgs | 31 mΩ @ 40A,20V |
| Vgs (th) (maximum) for different Ids | 2.8V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 232 nC @ 20 V |
| Vgs (max) | +25V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 3020 pF @ 1000 V |
| FET function | - |
| Power dissipation (maximum) | 310W |
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