Installation type | Base installation |
packing | bulk |
series | - |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SP6 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 500 V |
Current at 25 ° C - continuous drain (Id) | 180A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 20 mΩ @ 90A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 10mA |
Gate charge (Qg) at different Vgs (maximum) | 560 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 28000 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 1250W(Tc) |