TPN2R903PL,L1Q
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likeTPN2R903PL,L1Q
Brand：Toshiba
Model：TPN2R903PL,L1Q
stock：36242
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥1.00
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSIX-H |
| Part status | On sale |
| working temperature | 175°C |
| Encapsulation/Housing | 8-TSON Advance(3.1x3.1) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 70A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.9mOhm @ 35A,10V |
| Vgs (th) (maximum) for different Ids | 2.1V @ 200µA |
| Gate charge (Qg) at different Vgs (maximum) | 26 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2300 pF @ 15 V |
| FET function | - |
| Power dissipation (maximum) | 630mW(Ta),75W(Tc) |
Common problem
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