APTM50UM09FAG
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APTM50UM09FAG
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APTM50UM09FAG

Brand:Microchip
Model:APTM50UM09FAG
stock:40748
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥555.24
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Base installation
packing bulk
series -
Part status On sale
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing SP6
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 497A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 10 mΩ @ 248.5A,10V
Vgs (th) (maximum) for different Ids 5V @ 30mA
Gate charge (Qg) at different Vgs (maximum) 1200 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 63300 pF @ 25 V
FET function -
Power dissipation (maximum) 5000W(Tc)
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