STU65N3LLH5
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STU65N3LLH5
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STU65N3LLH5

Brand:ST
Model:STU65N3LLH5
stock:41108
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.37
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
series STripFET™ V
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing I-PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 65A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 7.3 mΩ @ 32.5A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 8 nC @ 4.5 V
Vgs (max) ±22V
Input capacitance at different Vds (Ciss) (maximum) 1290 pF @ 25 V
FET function -
Power dissipation (maximum) 50W(Tc)
Common problem
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