Installation type | Surface mount |
packing | TR,CT |
series | DeepGATE™, STripFET™ VI |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | H2Pak-2 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 40 V |
Current at 25 ° C - continuous drain (Id) | 120A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
On resistance (maximum) for different Ids and Vgs | 2.2 mΩ @ 60A,10V |
Vgs (th) (maximum) for different Ids | 1V @ 250µA(min) |
Gate charge (Qg) at different Vgs (maximum) | 181 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 8130 pF @ 20 V |
FET function | - |
Power dissipation (maximum) | 150W(Tc) |