PHD110NQ03LT,118
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likePHD110NQ03LT,118
Brand：NXP
Model：PHD110NQ03LT,118
stock：93792
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price:
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Common problem
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| Installation type | Surface mount |
| packing | TR |
| series | TrenchMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | DPAK |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 25 V |
| Current at 25 ° C - continuous drain (Id) | 75A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
| On resistance (maximum) for different Ids and Vgs | 4.6 mΩ @ 25A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 26.7 nC @ 5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2200 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 115W(Tc) |
Common problem
Industry trends
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