STR2N2VH5
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STR2N2VH5
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STR2N2VH5

Brand:ST
Model:STR2N2VH5
stock:78621
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.51
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series STripFET™ V
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 2.3A(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 30 mΩ @ 2A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA(min)
Gate charge (Qg) at different Vgs (maximum) 4.6 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 367 pF @ 16 V
FET function -
Power dissipation (maximum) 350mW(Tc)
Common problem
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