IAUS300N04S4N007ATMA1
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IAUS300N04S4N007ATMA1
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IAUS300N04S4N007ATMA1

Brand:Infineon
Model:IAUS300N04S4N007ATMA1
stock:36038
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series OptiMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-HSOG-8-1
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 300A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 740 mΩ @ 100A,10V
Vgs (th) (maximum) for different Ids 4V @ 275µA
Gate charge (Qg) at different Vgs (maximum) 342 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 27356 pF @ 25 V
FET function -
Power dissipation (maximum) 375W(Tc)
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