STW45N60DM2AG
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STW45N60DM2AG
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STW45N60DM2AG

Brand:ST
Model:STW45N60DM2AG
stock:89223
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥8.85
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series Automotive, AEC-Q101, MDmesh™ DM2
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-247-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 34A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 93 mΩ @ 17A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 56 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 2500 pF @ 100 V
FET function -
Power dissipation (maximum) 250W(Tc)
Common problem
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