IPD088N06N3GATMA1
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IPD088N06N3GATMA1
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IPD088N06N3GATMA1

Brand:Infineon
Model:IPD088N06N3GATMA1
stock:64079
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO252-3-311
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 50A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 8.8 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 4V @ 34µA
Gate charge (Qg) at different Vgs (maximum) 48 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 3900 pF @ 30 V
FET function -
Power dissipation (maximum) 71W(Tc)
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