Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | PowerFlat™(8x8)HV |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 650 V |
Current at 25 ° C - continuous drain (Id) | 40A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
On resistance (maximum) for different Ids and Vgs | 24 Ω @ 40A,18V |
Vgs (th) (maximum) for different Ids | 5V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 157 nC @ 18 V |
Vgs (max) | +22V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 3380 pF @ 400 V |
FET function | - |
Power dissipation (maximum) | 935W(Tc) |