Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | On sale |
working temperature | -55°C ~ 200°C(TJ) |
Encapsulation/Housing | TO-247 lengthfeedthrough |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 650 V |
Current at 25 ° C - continuous drain (Id) | 119A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
On resistance (maximum) for different Ids and Vgs | 24 mΩ @ 50A,18V |
Vgs (th) (maximum) for different Ids | 5V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 157 nC @ 18 V |
Vgs (max) | +22V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 3380 pF @ 400 V |
FET function | - |
Power dissipation (maximum) | 565W(Tc) |