STP65N045M9
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STP65N045M9
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STP65N045M9

Brand:ST
Model:STP65N045M9
stock:6838
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥16.31
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 55A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 45mOhm @ 28A, 10V
Vgs (th) (maximum) for different Ids 4.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 80 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 4610 pF @ 400 V
FET function -
Power dissipation (maximum) 245W(Tc)
Common problem
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