BSC005N03LS5ATMA1
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BSC005N03LS5ATMA1
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BSC005N03LS5ATMA1

Brand:Infineon
Model:BSC005N03LS5ATMA1
stock:25777
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.87
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series OptiMOS™
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TDSON-8 FL
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 42A(Ta),433A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 0.55 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 122 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 8900 pF @ 15 V
FET function -
Power dissipation (maximum) 3W(Ta),188W(Tc)
Common problem
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