STY112N65M5
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likeSTY112N65M5
Brand：ST
Model：STY112N65M5
stock：93559
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥50.55
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| Installation type | Through-Hole |
| packing | pipe |
| series | MDmesh™ V |
| Part status | On sale |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | MAX247™ |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 96A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 22 mΩ @ 47A,10V |
| Vgs (th) (maximum) for different Ids | 5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 350 nC @ 10 V |
| Vgs (max) | ±25V |
| Input capacitance at different Vds (Ciss) (maximum) | 16870 pF @ 100 V |
| FET function | - |
| Power dissipation (maximum) | 625W(Tc) |
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