STD10PF06T4
Home
Category
MOSFET
STD10PF06T4
The pictures are for reference only
like

STD10PF06T4

Brand:ST
Model:STD10PF06T4
stock:69893
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series STripFET™ II
Part status stop production
working temperature 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 10A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 200 mΩ @ 5A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 21 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 850 pF @ 25 V
FET function -
Power dissipation (maximum) 40W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer