STS4DPFS30L
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STS4DPFS30L
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STS4DPFS30L

Brand:ST
Model:STS4DPFS30L
stock:1056
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series STripFET™
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 55 mΩ @ 2.5A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 5 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 1350 pF @ 25 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 2.5W(Tc)
Common problem
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