NTNS2K1P021ZTCG
Home
Category
MOSFET
NTNS2K1P021ZTCG
The pictures are for reference only
like

NTNS2K1P021ZTCG

Brand:ON
Model:NTNS2K1P021ZTCG
stock:56550
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 3-XDFN(0.42x0.62)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 127mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4.5V
On resistance (maximum) for different Ids and Vgs 5 Ω @ 100mA,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 12800 pF @ 15 V
FET function -
Power dissipation (maximum) 125mW(Ta)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer