FQP13N50
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likeFQP13N50
Brand：ON
Model：FQP13N50
stock：55657
Store：ShenZhen/Hongkong
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| Installation type | Through-Hole |
| packing | pipe |
| series | QFET® |
| Part status | Final sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-220-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 500 V |
| Current at 25 ° C - continuous drain (Id) | 12.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 430 mΩ @ 6.25A,10V |
| Vgs (th) (maximum) for different Ids | 5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 60 nC @ 10 V |
| Vgs (max) | ±30V |
| Input capacitance at different Vds (Ciss) (maximum) | 2300 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 170W(Tc) |
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