NTD12N10-1G
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NTD12N10-1G
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NTD12N10-1G

Brand:ON
Model:NTD12N10-1G
stock:50920
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
series -
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing I-PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 12A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 165 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 20 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 550 pF @ 25 V
FET function -
Power dissipation (maximum) 1.28W(Ta),56.6W(Tc)
Common problem
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