NTBGS6D5N15MC
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NTBGS6D5N15MC
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NTBGS6D5N15MC

Brand:ON
Model:NTBGS6D5N15MC
stock:78429
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 150 V
Current at 25 ° C - continuous drain (Id) 15A(Ta),121A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 8V,10V
On resistance (maximum) for different Ids and Vgs 7mΩ @ 69A,10V
Vgs (th) (maximum) for different Ids 4,5V @ 379µA
Gate charge (Qg) at different Vgs (maximum) 57 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4745 pF @ 75 V
FET function -
Power dissipation (maximum) 3,7W(Ta),238W(Tc)
Common problem
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