FDB12N50FTM-WS
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FDB12N50FTM-WS
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FDB12N50FTM-WS

Brand:ON
Model:FDB12N50FTM-WS
stock:4491
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series UniFET™
Part status Final sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 11.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 700 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 30 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 1395 pF @ 25 V
FET function -
Power dissipation (maximum) 165W(Tc)
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