NTMTSC002N10MCTXG
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NTMTSC002N10MCTXG
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NTMTSC002N10MCTXG

Brand:ON
Model:NTMTSC002N10MCTXG
stock:1733
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount,Wettable wings
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-TDFNW(8.3x8.4)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 45A(Ta),236A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 2 mΩ @ 90A,10V
Vgs (th) (maximum) for different Ids 4V @ 520µA
Gate charge (Qg) at different Vgs (maximum) 89 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 6305 pF @ 50 V
FET function -
Power dissipation (maximum) 9W(Ta),255W(Tc)
Common problem
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