NTD18N06LT4G
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NTD18N06LT4G
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NTD18N06LT4G

Brand:ON
Model:NTD18N06LT4G
stock:26567
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥7.20
The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 18A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 65 mΩ @ 9A,5V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 5 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 675 pF @ 25 V
FET function -
Power dissipation (maximum) 2.1W(Ta),55W(Tj)
Common problem
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