NTMFS4C808NAT1G
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NTMFS4C808NAT1G
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NTMFS4C808NAT1G

Brand:ON
Model:NTMFS4C808NAT1G
stock:32893
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,bulk
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 9A(Ta),52A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.8 mΩ @ 18A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 18.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1670 pF @ 15 V
FET function -
Power dissipation (maximum) 760mW(Ta),25.5W(Tc)
Common problem
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