Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | TO-247-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 650 V |
Current at 25 ° C - continuous drain (Id) | 99A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V |
On resistance (maximum) for different Ids and Vgs | 28.5mOhm @ 45A, 18V |
Vgs (th) (maximum) for different Ids | 4.3V @ 15.5mA |
Gate charge (Qg) at different Vgs (maximum) | 164 nC @ 18 V |
Vgs (max) | +22V,-8V |
Input capacitance at different Vds (Ciss) (maximum) | 3480 pF @ 325 V |
FET function | - |
Power dissipation (maximum) | 348W(Tc) |